 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Formosa MS MBRA120T3 thru MBRA1100T3 Chip Schottky Barrier Diodes Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. SMA-L 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. 0.110(2.8) 0.094(2.4) 0.181(4.6) 0.165(4.2) 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 88 120 +150 o UNIT A A mA mA C/w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SS12 SS13 SS14 SS15 SS16 SS18 S110 V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature (o C) (V) MBRA120T3 MBRA130T3 MBRA140T3 MBRA150T3 MBRA160T3 MBRA180T3 MBRA1100T3 20 30 40 50 60 80 100 (V) 14 21 28 35 42 56 70 (V) 20 30 40 50 60 80 100 (V) 0.50 -55 to +125 *1 Repetitive peak reverse voltage 0.70 -55 to +150 0.85 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (MBRA120T3 thru MBRA1100T3) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 1.2 1.0 50 INSTANTANEOUS FORWARD CURRENT,(A) 14 0 0.8 R MB 0.6 0.4 0.2 0 0 20 40 60 80 10 3.0 1.0 M BR A1 50 ~M BR A1 60 M BR A1 20 ~M BR A AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 R MB A1 100 A1 20 4 A1 BR ~M 0 50 10 A1 BR ~M 0 120 140 160 180 200 BR M A1 80 BR ~M 10 A1 0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 24 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 12 6 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 350 300 250 200 150 100 50 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 Tj=75 C .1 Tj=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) |
Price & Availability of MBRA180T3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |